Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 40A 160000mW 3Pin(3+Tab) TO-262 Tube66175+$14.836850+$14.2027200+$13.8477500+$13.75891000+$13.67012500+$13.56875000+$13.50537500+$13.4419 -
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Category: IGBTtransistorDescription: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE6602 -
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Category: IGBTtransistorDescription: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9A)8253 -
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Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.97691+$244.783310+$238.397650+$233.5019100+$231.7991200+$230.5220500+$228.81911000+$227.75492000+$226.6906 -
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Category: IGBTtransistorDescription: Molding Type Module16011+$318.589110+$310.278150+$303.9063100+$301.6900200+$300.0278500+$297.81161000+$296.42642000+$295.0412 -
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Category: IGBTtransistorDescription: IGBT Module 1200V 100A SIC IGBT CoPak18011+$1707.214310+$1691.694225+$1683.934150+$1676.1740100+$1668.4140150+$1660.6539250+$1652.8938500+$1645.1338 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 48A 3Pin(3+Tab) TO-247AD39451+$352.989110+$343.780650+$336.7209100+$334.2653200+$332.4236500+$329.96801000+$328.43332000+$326.8986 -
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Category: IGBTtransistorDescription: Molding Type Module23271+$297.288810+$289.533450+$283.5877100+$281.5196200+$279.9685500+$277.90041000+$276.60782000+$275.3153 -
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Category: IGBTtransistorDescription: Molding Type Module33841+$497.131210+$484.162650+$474.2199100+$470.7616200+$468.1679500+$464.70961000+$462.54822000+$460.3867 -
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Category: IGBTtransistorDescription: IGBTmodule67951+$861.067110+$830.854250+$827.0776100+$823.3010150+$817.2584250+$811.9712500+$806.68391000+$800.6413 -
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Category: IGBTtransistorDescription: IGBT Modules, Infineon * * Infineon package types include 62mm modules, EasyPACK, EconoPACKTM IGBT discrete parts and modules. Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.13311+$404.984010+$394.419250+$386.3195100+$383.5022200+$381.3893500+$378.57201000+$376.81122000+$375.0504 -
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Category: IGBTtransistorDescription: INFINEON IRG4PH20KDPBF Single transistor, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-247AC, 3 pins192710+$7.5864100+$7.2071500+$6.95421000+$6.94162000+$6.89105000+$6.82787500+$6.777210000+$6.7519 -
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Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.36961+$730.366110+$704.739250+$701.5358100+$698.3325150+$693.2071250+$688.7224500+$684.23771000+$679.1123 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 60A 190000mW 24Pin ECONO 2 Tray47791+$466.252610+$454.089450+$444.7644100+$441.5209200+$439.0883500+$435.84481000+$433.81762000+$431.7904 -
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Category: IGBTtransistorDescription: INFINEON IRG4PH20KPBF Single transistor, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-247AC, 3 pins390410+$7.3248100+$6.9586500+$6.71441000+$6.70222000+$6.65345000+$6.59237500+$6.543510000+$6.5191 -
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Category: IGBTtransistorDescription: Boost chopper trench+field stop IGBT power module23561+$520.309510+$506.736250+$496.3300100+$492.7104200+$489.9958500+$486.37621000+$484.11402000+$481.8518 -
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Category: IGBTtransistorDescription: IGBT 600V 480A 830W INT-A-PAK84101+$912.259910+$880.250850+$876.2497100+$872.2485150+$865.8467250+$860.2451500+$854.64351000+$848.2417 -
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Category: IGBTtransistorDescription: Circuit Diagram90061+$652.787910+$629.883150+$627.0200100+$624.1569150+$619.5759250+$615.5676500+$611.55921000+$606.9783 -
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Category: IGBTtransistorDescription: ROHM BM63363S-VC Intelligent Power Module (IPM), IGBT, 600 V, 10 A, 1.5 kV, SDIP, DIPIPM new97501+$126.547210+$123.245950+$120.7150100+$119.8346200+$119.1744500+$118.29411000+$117.74392000+$117.1937 -
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Category: IGBTtransistorDescription: Full Bridge NPT IGBT Power Module33191+$315.218510+$306.995450+$300.6910100+$298.4982200+$296.8535500+$294.66071000+$293.29022000+$291.9197 -
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Category: IGBTtransistorDescription: APT85GR120JD60 Single 1200 V 116 A 543 W IGBT - TO-247-415331+$269.295510+$262.270450+$256.8845100+$255.0111200+$253.6061500+$251.73281000+$250.56192000+$249.3911 -
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Category: IGBTtransistorDescription: IGBT Modules, Infineon * * Infineon package types include 62mm modules, EasyPACK, EconoPACKTM IGBT discrete parts and modules. Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.31701+$987.253710+$952.613250+$948.2831100+$943.9531150+$937.0250250+$930.9629500+$924.90081000+$917.9727 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.94461+$1471.589910+$1458.211825+$1451.522850+$1444.8337100+$1438.1447150+$1431.4556250+$1424.7666500+$1418.0775 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 85A 350000mW 24Pin76121+$1216.505410+$1205.446325+$1199.916750+$1194.3871100+$1188.8576150+$1183.3280250+$1177.7984500+$1172.2688
